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PD - 91305C
Advanced Process Technology l Surface Mount (IRFZ46NS) l Low-profile through-hole (IRFZ46NL) l 175C Operating Temperature l Fast Switching l Fully Avalanche Rated Description
l
HEXFET(R) Power MOSFET
D
IRFZ46NS IRFZ46NL
VDSS = 55V RDS(on) = 0.0165
G
Advanced HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRFZ46NL) is available for lowprofile applications.
ID = 53A
S
D 2 Pak
TO-262
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TA = 25C PD @TC = 25C V GS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max. 53
37 180 3.8 107 0.71 20 28 11 5.0 -55 to + 175 300 (1.6mm from case )
Units
A W W W/C V A mJ V/ns C
Thermal Resistance
Parameter
RJC RJA Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)**
Typ.

Max.
1.4 40
Units
C/W
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1
04/08/04
IRFZ46NS/IRFZ46NL
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance V GS(th) Gate Threshold Voltage gfs Forward Transconductance V (BR)DSS IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS Ciss Coss Crss EAS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Single Pulse Avalanche Energy Min. 55 2.0 19 Max. Units Conditions V VGS = 0V, ID = 250A V/C Reference to 25C, ID =1mA .0165 VGS =10V, ID = 28A 4.0 V VDS = VGS, ID = 250A S VDS = 25V, ID = 28A 25 VDS = 55V, VGS = 0V A 250 VDS = 44V, VGS = 0V, T J = 150C 100 VGS = 20V nA -100 VGS = -20V 72 ID = 28A 11 nC VDS = 44V 26 VGS = 10V, See Fig. 6 and 13 VDD = 28V ID = 28A ns RG = 12 RD = 0.98, See Fig. 10 Between lead, nH 7.5 and center of die contact 1696 VGS = 0V 407 pF VDS = 25V 110 = 1.0MHz, See Fig. 5 583152 IAS = 28A, L = 389mH Typ. 0.057 14 76 52 57
Source-Drain Ratings and Characteristics
IS
I SM
V SD t rr Q rr ton Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol 53 showing the A G integral reverse 180 p-n junction diode. S 1.3 V TJ = 25C, IS = 28A, VGS = 0V 67 101 ns TJ = 25C, IF = 28A 208 312 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Repetitive rating; pulse width limited by Starting TJ = 25C, L = 389H
TJ 175C. RG = 25, IAS = 28A. (See Figure 12)
max. junction temperature. ( See fig. 11 )
Pulse width 400s; duty cycle 2%. Uses IRFZ46N data and test conditions. This is a typical value at device destruction and represents
operation outside rated limits.
ISD 28A, di/dt 220A/s, VDD V(BR)DSS,
This is a calculated value limited to TJ = 175C. Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 39A.
** When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994.
2
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IRFZ46NS/IRFZ46NL
1000
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
1000
I , Drain-to-Source Current (A) D
I , Drain-to-Source Current (A) D
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
100
100
10
10
4.5V
4.5V
1 0.1
20s PULSE WIDTH TJ = 25C TC = 25C
1 10
A
100
1 0.1
20s PULSE WIDTH TJ = 175C TC = 175C
1 10 100
A
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.5
R DS(on) , Drain-to-Source On Resistance (Normalized)
I D = 46A
I D , Drain-to-Source Current (A)
2.0
100
TJ = 25C TJ = 175C
1.5
1.0
10
0.5
1 4 5 6 7
V DS = 25V 20s PULSE WIDTH
8 9 10
A
0.0 -60 -40 -20 0 20 40 60
VGS = 10V
80 100 120 140 160 180
A
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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3
IRFZ46NS/IRFZ46NL
2800
2400
C, Capacitance (pF)
2000
Ciss
1600
Coss
1200
V GS , Gate-to-Source Voltage (V)
V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd
20
I D = 28A V DS = 44V V DS = 28V
16
12
8
800
Crss
400
4
0 1 10 100
A
0 0 10 20 30
FOR TEST CIRCUIT SEE FIGURE 13
40 50 60
A
VDS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY R DS(on)
I D , Drain Current (A)
100
100
10s
TJ = 175C TJ = 25C
10
100s
10
1ms
1 0.4 0.8 1.2 1.6
VGS = 0V
2.0
A
1 1
TC = 25C TJ = 175C Single Pulse
10
10ms
2.4
A
100
VSD , Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRFZ46NS/IRFZ46NL
V DS
60 50
ID, Drain Current (A)
RD
V GS
Limited By Package
RG 10V
Pulse Width 1 s Duty Factor 0.1 %
D.U.T. VDD
+
40 30
Fig 10a. Switching Time Test Circuit
20
VDS 90%
10
0 25 50 75 100 125 150 175 T C , Case Temperature (C)
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Case Temperature
10
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 PDM t1 t2
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFZ46NS/IRFZ46NL
E AS , Single Pulse Avalanche Energy (mJ)
500
L VDS D.U.T. RG + V - DD
10 V
TOP
400
BOTTOM
ID 11A 20A 28A
300
IAS tp
0.01
200
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS tp VDD VDS
100
0
VDD = 25V
25 50 75 100 125 150
A
175
Starting TJ , Junction Temperature (C)
IAS
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
Current Regulator Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50K
QG
12V
.2F .3F
10 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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IRFZ46NS/IRFZ46NL
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ V DD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS
= 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
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7
IRFZ46NS/IRFZ46NL
D2Pak Package Outline
10.54 (.415) 10.29 (.405) 1.40 (.055) MAX. -A2 4.69 (.185) 4.20 (.165) -B1.32 (.052) 1.22 (.048) 6.47 (.255) 6.18 (.243) 15.49 (.610) 14.73 (.580) 5.28 (.208) 4.78 (.188) 1.40 (.055) 1.14 (.045) 3X 5.08 (.200) 1.39 (.055) 1.14 (.045) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 8.89 (.350) REF. 10.16 (.400) REF.
1.78 (.070) 1.27 (.050)
1
3
3X
0.93 (.037) 0.69 (.027) 0.25 (.010) M BAM
0.55 (.022) 0.46 (.018)
MINIMUM RECOMMENDED FOOTPRINT 11.43 (.450)
NOTES: 1 2 3 4 DIMENSIONS AFTER SOLDER DIP. DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. CONTROLLING DIMENSION : INCH. HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS.
LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE
8.89 (.350) 17.78 (.700)
3.81 (.150) 2.08 (.082) 2X 2.54 (.100) 2X
Part Marking Information
D2Pak
INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE
PART NUMBER F530S 9246 9B 1M
A
DATE CODE (YYWW) YY = YEAR WW = WEEK
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8
IRFZ46NS/IRFZ46NL
2- COLLECTOR
3- EMITTER
1- GATE
S @ 7 H V I A U S 6 Q
@ 9 P 8 A @ U 6 9
& ( ( A 2 A & A S 6 @
( A F @ @ X
IGBT
8 A @ DI G
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
G 6 I DP U 6 I S @ U DI
S D@ DA U 8 @ S & ( ( A ( A X X A I P A 9 @ G 7 H @ T T 6 G " " G DS A I 6 A T D A DT C U ) @ G Q H 6 Y @ ( ' & A @ 9 P 8 A U P G
P B P G
G 7 H @ T T 6
@ 9 P 8 A U P G
TO-262 Package Outline
A 8 A A @ DI G A G 7 H @ T T 6 A @ C U A DI
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9
IRFZ46NS/IRFZ46NL
Tape & Reel Information
D2Pak
TRR
1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153)
1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
11.60 (.457) 11.40 (.449)
15.42 (.609) 15.22 (.601)
24.30 (.957) 23.90 (.941)
TRL
10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178)
FEED DIRECTION
13.50 (.532) 12.80 (.504)
27.40 (1.079) 23.90 (.941)
4
330.00 (14.173) MAX.
60.00 (2.362) MIN.
NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039) 24.40 (.961) 3
30.40 (1.197) MAX. 4
Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 4/04
10
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